文章摘要
黄奕钒,徐启峰,陈昊,等.光学电压传感器分压结构的缺陷及改进方法[J].电力系统自动化,2018,42(21):166-171. DOI: 10.7500/AEPS20171102003.
HUANG Yifan,XU Qifeng,CHEN Hao, et al.Defects and Improvement Methods of Voltage Division Structure of Optical Voltage Sensor[J].Automation of Electric Power Systems,2018,42(21):166-171. DOI: 10.7500/AEPS20171102003.
光学电压传感器分压结构的缺陷及改进方法
Defects and Improvement Methods of Voltage Division Structure of Optical Voltage Sensor
DOI:10.7500/AEPS20171102003
关键词: 光学电压传感器  测量误差  晶体分压  电场分布  半波电压
KeyWords: optical voltage sensor  measurement error  crystal voltage division  electric field distribution  half-wave voltage
上网日期:2018-09-29
基金项目:
作者单位E-mail
黄奕钒 福州大学电气工程与自动化学院, 福建省福州市 350116  
徐启峰 福州大学电气工程与自动化学院, 福建省福州市 350116 ranger123098@163.com 
陈昊 福州大学电气工程与自动化学院, 福建省福州市 350116  
许志坤 福州大学电气工程与自动化学院, 福建省福州市 350116  
摘要:
      现有的光学电压传感器多基于光功率检测模式,其测量范围与测量灵敏度受到电光晶体半波电压的限制。纵向调制的多片晶体叠层结构可以解决半波电压限制的问题,但仅适用于1 000 kV电压等级。此外,仿真结果表明这一结构中晶体内的电场分布极不均匀,受震动与热胀冷缩等因素的影响,光路或晶体的相互位置易产生偏移而引入积分电压误差。文中以110 kV电压等级为例,对多片晶体叠层结构进行了改进,简化了传感系统的结构,并将MgTiO3陶瓷按照一定的要求安装在锗酸铋(BGO)晶体的外部以改善晶体的内电场分布,可以把积分电压误差从0.275%降低至0.01%以下。改进后的结构可用于各种电压等级。最后,通过实验验证了新方法的有效性。
Abstract:
      The measurement mode of existing optical voltage sensor is mostly based on optical power detection, so its measurement range and sensitivity are limited by the half-wave voltage of electro-optic crystal. The multi-segmented Pockels sensor can fix the problem of limitation of the half-wave voltage, but only for 1 000 kV voltage level. In addition, from the simulations the electric field distribution in the crystal is un-uniform and the optical path and crystal slices are deviated easily by vibration and thermal expansion and contraction in this configuration, which results in measurement error. Therefore, the multi-segmented structure is improved at 110 kV voltage level. The sensing system is simplified and the MgTiO3 ceramic is used to wrap around the crystal to improve the electric field distribution in the crystal, so that the error reduces from 0. 275% to 0. 01% or less. The improved structure is applicable to various voltage levels. Finally, the validity of the proposed method is verified by the experiment.
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